An XPS and thermogravimetric study of oxidized AlN and AlN–Si3N4 layers deposited by liquid-phase chemical vapour deposition

Abstract  The results of a comparative study of the resistance to oxidation of AlN and a codeposit of AlN–Si3N4 are presented. The oxidation of both types of layer was performed at 1200°C in an oxygen gas flow (pO2∼1 atm). A