Friday, August 15, 2008
Influence of Oxygen Content on the Physical and Electrical Properties of Thin Yttrium Oxide Dielectrics Deposited by Reactive RF Sputtering on Si Substrates
Abstract This paper describes the physical properties and electrical characteristics of thin Y2O3 gate oxides grown on silicon substrates through reactive radiofrequency (RF) sputtering. The structural and morphological features of thes
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