Silicosis
Sunday, August 24, 2008
Diffusion of phosphorus in CdTe
Abstract The diffusion of phosphorus in CdTe was measured as a function of anneal time and temperature in the temperature range 600–900°C. The diffusion anneals were carried out in evacuated silica capsules mainly with traces of
No comments:
Post a Comment
‹
›
Home
View web version
No comments:
Post a Comment